We report distributed amplifiers with 80 GHz bandwidth and 6.7 dB mid-band gain. These amplifiers were fabricated in the transferred-substrate heterojunction bipolar transistor integrated circuit technology. Transferred-substrate HBT's have very high f/sub max/ (>400 GHz) and have yielded distributed amplifiers with record gain-bandwidth product.
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Agarwal et al. (1998) studied this question.
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