Microcrystallization in P-Doped Si:H Films at High Deposition Rate

A new preparation process for the microcrystallization of hydrogenated silicon (Si:H) doped heavily with P has been observed under conditions such as a high deposition rate of about 4.5 nm/s and a high substrate temperature of 470°C without a strong hydrogen dilution of silane; this is really unusual in comparison with that for microcrystalline formation in conventional low-rate-deposited Si:H films. The existence of P atoms and the reduction of H atoms on the growth surface enhance the microcrystallization of high-rate-deposited films.