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Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1×{}3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the {Γ}-{Δ}-X direction. The deconvoluted Sb 4d and Ga 3d core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.
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Franklin et al. (1990) studied this question.
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