Dramatic dependence of dielectric properties on the pulsing frequency was found for titanium oxide films deposited using the pulsed dc magnetron sputtering technique at room temperature. The frequency range studied was between 50 and 250 kHz by varying the oxygen pressure. A minimum leakage current density of 0.22 μA/cm2 at 0.5 MV/cm electric-field strength for a film with dielectric constant of 26 was achieved for relative oxygen pressure P=60% [P(%)=PO2/(PO2+PAr] and frequency f=200 kHz.
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Kim et al. (2001) studied this question.
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