Etching Characteristics by M= 0 Helicon Wave Plasma

The each characteristics of SiO 2 and Al–Si–0.5%Cu were studied using the M =0 helicon wave plasma etching apparatus. A high concentration of F radicals was observed during SiO 2 etching using fluorocarbon gases. The etch rate of SiO 2 was strongly dependent on the concentration of F radicals in the plasma. A method of increasing the selectivity of SiO 2 to poly-Si was discussed. The Al–Si–0.5%Cu film deposited on the wafer of 200 mm diameter was anisotropically etched with high selectivity to photoresist using Cl 2 and BCl 3 gases. The etch rate uniformity across a wafer was also discussed.