Oxidation mechanisms in TiSi2 films on single silicon substrates

Ti is deposited on single silicon wafer and then forms TiSi2 by thermal annealing in vacuum. In the steam oxidation, TiSi2 first dissociates and forms a Ti compound and SiO2. After the formation of Ti compound reaches the saturation level, the substrate Si rapidly diffuses through the TiSi2 to form SiO2, while the TiSi2 remains inert. A two-step oxidation process is thus described. The calculated activation energy of reaction is 46.2 kcal/mol, and that of diffusion is 32 kcal/mol.