Diode-pumped passively Q-switched Tm:YAP laser using a HfSe2/CsPbBr3 heterostructure as the saturable absorber

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In this paper, a HfSe 2 /CsPbBr 3 heterostructure was prepared and used as a saturable absorber (SA) to modulate a Tm:YAP laser. Under continuous-wave operation, the Tm:YAP crystal was pumped with a diode laser at an absorbed pump power of 12.9 W, producing an output power of 2.35 W at 1995.9 nm and a slope efficiency of 23.2 %. In passively Q-switched mode, the HfSe 2 /CsPbBr 3 heterostructure SA modulated the Tm:YAP laser, resulting in an average output power of 2.1 W and a pulse width of 687.2 ns at 1987.5 nm, with a pulse repetition rate of 112.82 kHz. These parameters correspond to a slope efficiency of 19.8 %, a single-pulse energy of 18.6 µJ, and a peak power of 27.1 W.