Residual order in the thermal oxide of a fully strained SiGe alloy on Si

Residual order in the thermal oxide of a fully strained SiGe alloy on a Si(001) surface was investigated by synchrotron x-ray diffraction. Ordered SiO₂ was present in the oxide layer, and the crystalline order was similar to that of Si. The dependence of the order on oxidation time and temperature was also obtained. On the basis of these results, the oxidation reaction at the interface and the differences in rate enhancement between dry and wet oxidation conditions are discussed.