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July 23, 1990Applied Physics Letters

Wet oxidation of GeSi strained layers by rapid thermal processing

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Authors

DNDeepak Kumar NayakBudge Budge Institute of TechnologyKKK. KamjooUniversity of California, Los AngelesJPJeannie ParkCamber Collective (United States)

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Cite This Study

Nayak et al. (1990) studied this question.

synapsesocial.com/papers/6a6f9effe5469ee92be08347https://doi.org/10.1063/1.103694
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Hole transport through minibands of a symmetrically strained Ge<i>x</i>Si1−<i>x</i>/Si superlattice1989 · 33 citations
  2. 2Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation1989 · 153 citations
  3. 3Novel oxidation process in Ge+-implanted Si and its effect on oxidation kinetics1987 · 109 citations
  4. 4Multiple angle ellipsometric analysis of surface layers and surface layer contaminants1982 · 25 citations
  5. 5Rapid thermal oxidation of GeSi strained layers1990 · 90 citations