Electron emission from depletion layers of silicon p-n junctions

Measurements of the energy distribution of electrons emitted in vacuum by very shallow silicon p-n junctions are described. It has been found that diodes with the junction perpendicular to the surface show a relatively narrow peak and a broad band, while diodes with the junction parallel to the surface only give a narrow peak (half-width 0.50 eV). The broad band is ascribed to electrons emitted from the depletion layer of the junction, and the narrow peak is attributed to electrons emitted from the neutral n layer.