Deep-level centers in undoped p-GaAs layers grown by liquid phase epitaxy

Deep-level centers in GaAs-based p-n junctions, which were fabricated by a liquid phase epitaxy in hydrogen or argon ambients, were investigated. The minority charge carrier lifetime for p -layers grown in hydrogen is an order of magnitude larger than that for p -layers grown in argon. It is demonstrated that disimilar deep-level centers are formed in different gas media. Two types of deep-level centers, which act as hole traps, are found in the samples grown in hydrogen. The Arrhenius dependences for these centers are close to known dependences for HL 2 and HL 5 centers, suggesting that the centers observed can be identified as HL 2 and HL 5 centers. One type of deep-level center, which is a hole trap, is found in the samples grown in argon. This center is identified as arsenic in the gallium sublattice.