A simple method to characterize deep levels in high-resistivity materials is described. Excess carriers are optically injected by pulsed light. The detrapping of these carriers leads to a transient current collected between two contacts. The signal is analyzed as in DLTS, i.e., deep level spectra are recorded during temperature cycles. Some examples of the use of this method are given.
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Hurtes et al. (1978) studied this question.
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