High-Performance a-IGZO TFT With ZrO₂ Gate Dielectric Fabricated at Room Temperature

We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel andZrO₂gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments.ZrO₂is one of the most promising high-kmaterials. The a-IGZO TFT (channelW/L = 240/30\ μm) withZrO₂shows high performance such as highoncurrent of 2.11 mA and high field effect mobility of 28cm²/(V⋯)at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches.