Micro-electroreflectance and photoreflectance characterization of the bias dependence of the quantum confined Stark effect in a fabricated 0.98 μm InGaAs/GaAs/InGaP laser

Using electro- and photoreflectance with a spatial resolution of ≈10 μm we have evaluated the energy of the fundamental conduction to heavy-hole (1C–1HH) quantum transition of a fabricated 0.98 μm InGaAs/GaAs/InGaP p-i-n quantum well laser structure as a function of bias and position on the laser stripe. From a comparison of the measured forward/reverse bias dependence of the 1C–1HH energy with a theoretical calculation of the quantum confined Stark effect, we have been able to evaluate the built-in electric field and width of the insulating region.