Resonance Raman scattering in III–V semiconductors and their alloys

The resonances in the Raman cross section of InAs and several pseudobinary alloys of III–V compounds in the neighbourhood of the E 0 and E 1 gaps were investigated. The alloying technique was used to bring the gaps to the region where the lines of the Ar‐ion laser occur. The E 0 ‐Raman resonance shifts with temperature the same as the corresponding absorption gap, while a much smaller shift is exhibited by the E 1 resonance. These resonant gaps shift with alloy concentration less than the corresponding absorption gaps, a fact which seems to be a reflection of the more localized nature of the Raman scattering phenomenon. The LO phonon exhibits in the forbidden scattering configurations a strong resonance near E 1 at 77 °K. This resonance disappears rapidly as the temperature is increased.