The first comparison of time-resolved reflectivity (TRR) signatures for crystalline and ion implantation amorphized GaAs, during pulsed ruby laser irradiation, is reported. The inferred durations of surface melting are strikingly different for the crystalline and ion-implanted cases. The measurements are in good agreement with the results of thermal melting model calculations for the crystalline case.
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Lowndes et al. (1981) studied this question.
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