The time-resolved infrared transmittance and reflectance of a melt induced by a 10 nsec optical-laser pulse has been observed in an undoped crystalline GaAs wafer. Picosecond pulsed, 2.86 GHz repetition rate, infrared radiation from a free-electron laser was used to study the formation and propagation of the melt in real time. The back reflectance (probed from the side opposite to the incident optical radiation) displays interference oscillations as the melt propagates in the sample. The measurements are in agreement with model calculations which describe the melt with the Drude free-carrier model.
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Keay et al. (1999) studied this question.
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