Dopant diffusion calculations explain well the mechanism of the non-equilibrium incorporation of boron from the silicon surface into the molten silicon induced by a pulsed excimer laser. When a high-power laser causes the melt front to proceed into the substrate faster than 8 m/s, p + doped regions are formed only near the surface of the molten region because dopant atoms cannot diffuse sufficiently fast for the junction depth to reach the maximum melt depth.
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Sameshima et al. (1987) studied this question.
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