Time-resolved x-ray measurement system for studying the lattice deformation of semiconductor crystals under laser irradiation

This article describes the outline of a time-resolved x-ray measurement system developed at the Photon Factory to study the pulsed laser annealing of silicon crystals. This system consists of a triple-crystal diffractometer, Q-switched Nd:YAG laser, and two fast detector electronics using a plastic scintillation counter, and enables us to examine the time-change behavior of nearly intrinsic rocking curves under laser irradiation with a time resolution of about 50 ns. The difference in the recovery from lattice deformation between 1.06-μm laser annealing and 0.53-μm laser annealing is clarified.