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Time-resolved transmission and reflectivity of silicon on sapphire have been studied at λ=1152 and 633 nm following excitation by a {~}1 J/cm², 8 nsec pulse at 485 nm. In addition, the spectral dependence of the transient absorption was obtained for the range 1.3 to 3.3 eV with use of a pulsed-dye-laser probe. The results are inconsistent with a metallic molten state but suggest the existence of a self-confined dense carrier system similar to that proposed by Van Vechten and Wautelet.
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Aydınlı et al. (1981) studied this question.
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