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We have reacted thin Pt, Pd, and Ni films with single-crystal Si using Q-switched Nd : YAG laser pulses of 100-nsec duration in the power range 18–50 MW cm−2. The layers are laterally very uniform in thickness but are not single phase. Average composition of the reaction product layer can be changed over a wide range by varying film thickness and laser power. The microstructure of the reacted layers indicates that reaction occurs via surface melting, mixing, and rapid resolidification.
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Poate et al. (1978) studied this question.
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