Chemical Deposition of Mo on Si

A good Schottky diode has been obtained by the chemical deposition of Mo on Si. Thermodynamical consideration denotes that the deposition rate of Mo is determined by solid MoCl 3 produced as the intermediate product of H 2 reduction of MoCl 5 . If the deposition temperature is above 600°C theoretical deposition rates agree with experimental results. Mo deposited on Si at 500∼800°C has the structure of fiber texture oriented to (100). Above 900°C, MoSi 2 is detected by electron diffraction analysis. Between 600 and 800°C, the Mo film of thickness 1000 Å has the resistivity which is very close to its bulk resistivity. By the deposition for 30 min. at 560°C, a good Mo-Si Schottky diode with the same barrier height as previously reported, is obtained. At 600°C, the deposition time must be within 15 min. to get a good Schottky diode. But the barrier height is about 20% higher than that of a diode, fabricated at 560°C.