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Data are presented showing that the alloy (Si2)x(GaAs)1−x can be formed in a GaAs quantum well (QW) and shifts the operation of an AlxGa1−xAs-GaAs QW laser to higher energy. The (Si2)x(GaAs)1−x barrier, which is formed by sheet deposition (metalorganic chemical vapor deposition) of Si on the initial portion of a GaAs QW layer and then by ‘‘capping’’ this with the remaining part of the QW, can be observed directly by transmission electron microscopy.
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Burnham et al. (1986) studied this question.
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