Stimulated emission in a degenerately doped GaAs quantum well

Data are presented showing that a single GaAs quantum well as small as Lz ≲80 Å can be operated in stimulated emission if supplied sufficiently with electrons, which can be done by doping (ND≳Nc). It is shown, via photoluminescence data and an approximate analysis, that the smaller the GaAs well size Lz (1500, 400, 200, 80 Å) the greater is the effect of a fixed confining layer doping (ND ∼5×1018/cm3) in increasing the quantum-well carrier population and the luminescence energy.