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Light-emitting diode heterostructures with 150 nm Ga0.95Mn0.05As spin injector layers and In0.4Ga0.6As quantum dot active regions were grown and fabricated into 600 µm diameter mesa-shaped surface-emitting devices. Polarised light at 1.05 µm is observed with an output polarisation efficiency of 30% and record high temperature operation.
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Fathpour et al. (2004) studied this question.
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