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We have studied magnetic and magnetotransport properties of novel III-V diluted magnetic semiconductors, (Ga1−xMnx)As. The GaMnAs thin films were grown on GaAs(001) substrates by low temperature molecular beam epitaxy. We present magnetoresistance, extraordinary Hall effect, and M–H characteristics of two (Ga1−xMnx)As samples having different Mn content x.
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Hayashi et al. (1997) studied this question.
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