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Rapid-isothermal processing (RIP)-assisted metalorganic chemical vapor deposition (MOCVD) has been used for the deposition of high-quality films of YBa/sub 2/Cu/sub 3/O/sub 7/ (YBCO) on insulating substrates at temperatures as low as 610 degrees C. The results of processing and characterization of YBCO films deposited on bulk gold foils and Au/Si substrates by RIP-assisted MOCVD are reported. By the use of YBCO/Au foils, improvement in the performance of Au/YBCO/n-Si Schottky diodes operating at 50 K is achieved.>
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Singh et al. (1993) studied this question.
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