Reactive magnetron sputtering of ZnO

A planar magnetron with a zinc target is used to sputter zinc oxide in an oxygen atmosphere. Highly oriented zinc oxide films are obtained on a variety of subtrates such as gold, aluminum, platinum, quartz, and oxidized silicon. The sputtering rate is typically 10–20 μm/h for a substrate temperature of 450–500 °C, a substrate-to-target spacing of 4–7 cm, an oxygen partial pressure of 7 μm, and an input rf power of 1–1.25 kW. The films are evaluated by acoustic measurements, x-ray diffraction, reflection electron diffraction, and scanning electron microscopy.