Properties of the p-n junction in a ferroelectric semiconductor have been considered. In cases where the spontaneous polarization and the p-n junction field are of opposite directions the polarization distribution has two different stable states with a jumping transition between them, the p-n junction capacity showing both temperature and bias voltage hysteresis. In this case the potential distribution is nonmonotone. The behavior singularities of the pyroelectric current in a p-n junction ferroelectric semiconductor have been studied.
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Sandomirskiǐ et al. (1982) studied this question.