High-resolution Si $2p$ core-level spectra reveal a homogeneous broadening for amorphous compared to crystalline silicon. This is due to static fluctuations in valence charges brought about by bond-length and bond-angle variations in the amorphous network. The observed Gaussian broadening of 256 meV corresponds to mean deviation from charge neutrality of approximately 0.11 elementary charges. The addition of hydrogen reduces the charge fluctuations by {~}25%.
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Ley et al. (1982) studied this question.
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