Reproducible and reliable bipolar resistive switching was obtained from Ag / SrTiO 3 ( STO ) / Pt memory cells. The current–voltage characteristic of the Ag/STO/Pt cells with a positive voltage applied to the Pt electrode and the results of X-ray photoelectron spectroscopy imply that the electrochemical reaction and the diffusion of Ag + ions play a critical role in the resistive switching effect. The temperature dependence of the on-state resistance, combined with the time dependence of the on- and off-state resistances under a constant voltage, provides further evidence that the resistive switching mechanism should be ascribed to the formation and dissolution of the metallic Ag nanofilaments.
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Yan et al. (2010) studied this question.
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