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CmFn radicals produced in an electron-cyclotron-resonance ion source for reactive ion beam etching of SiO 2 were observed with photoionization mass spectrometry. Pressure dependence of the densities of radicals shows an apparent contribution of the radicals to the etching rate in a pressure region higher than about 2×10 -2 Pa.
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Hayashi et al. (1982) studied this question.
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