A model is presented for the time-dependent mobility of channel carriers in MOSFETs following pulsed irradiation. It includes the effects of both trapped hole ( Delta N/sub OT/) removal (annealing) and the time-dependent buildup of interface traps ( Delta N/sub IT/). Several sets of time-resolved transconductance data beginning at 10/sup -4/ s are examined for n-channel devices in light of the model. It is shown that, even though Delta N/sub IT/ generally dominates the change in mobility at late time, at early times (>
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McLean et al. (1989) studied this question.
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