Generic impulse response function for MOS systems and its application to linear response analysis

A generalized response function is presented that can describe several of the practically important transient-response features of MOS systems. It allows for deviations from strict logarithmic time dependencies yet is mathematically tractable in performing linear response analysis. Fits of the generic response function to experimental data are discussed, including the short-term recovery due to hole transport, the long-term recovery due to trapped hole annealing, and the long-term, time-dependent buildup of interface traps. Analytic results for the convolution integral of linear response theory are derived for a square irradiation pulse, and some simple applications are discussed.>