Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates

Phosphorus or aluminum ions were directly implanted into semi-insulating 4H-SiC substrates with no epitaxial layers to form n- or p-type layers, respectively, with doping densities in the range from 10 17 to 10 19 cm −3 . The electrical properties of these implanted layers annealed at 1650 °C were characterized by Hall effect measurements in the temperature range of 160–900 K. The electrical activation ratios of implanted dopants were 88–98%. The density of compensating defects was higher in Al + -implanted layers than in P + -implanted ones. The mobilities of the implanted layers were mostly comparable to those of epitaxial layers in the doping range investigated.