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The space-charge polarization capacity and the conductance of single crystals of thallous chloride have been measured as a function of frequency between 80°C and just below the melting point (427°C). Analysis of these data gives new values of the free energies of formation and motion of the Schottky defects which are characteristic of this system. Thus, hf= 1.36 eV; hm(cation)= 0.40 eV; hm(anion)= 0.09 eV. The defect concentration at the melting point x0(Tm)≈0.08 at %.
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Jackson et al. (1967) studied this question.
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