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January 1, 1980IEEE Transactions on Nuclear ScienceOpen Access

Considerations for Hardening MOS Devices and Circuits for Low Radiation Doses

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JMJ.M. McGarrityCoolCad Electronics (United States)

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J.M. McGarrity (1980) studied this question.

synapsesocial.com/papers/6a85042ee7eca461fe847bd2https://doi.org/10.1109/tns.1980.4331098
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  1. 1Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator1971 · 122 citations
  2. 2Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors1978 · 60 citations
  3. 3MOS Hardness Characterization and Its Dependence upon Some Process and Measurement Variables1976 · 19 citations
  4. 4Model of Tracks of Ionizing Radiations for Radical Reaction Mechanisms1966 · 234 citations
  5. 5Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS Capacitors1977 · 143 citations