Thin-film transistors in polycrystalline silicon by blanket and local source/drain hydrogen plasma-seeded crystallization

Thin film n-channel transistors have been fabricated in polycrystalline silicon films crystallized using hydrogen plasma seeding, by using several processing techniques with 600 to 625/spl deg/C or 1000/spl deg/C as the maximum process temperature. The TFTs from hydrogen plasma-treated films with a maximum process temperature of 600/spl deg/C, have a linear field-effect mobility of /spl sim/35 cm/sup 2//Vs and an ON/OFF current ratio of /spl sim/10/sup 6/, and TFTs with a maximum process temperature of 1000/spl deg/C, have a linear field-effect mobility of /spl sim/100 cm/sup 2//Vs and an ON/OFF current ratio of /spl sim/10/sup 7/. A hydrogen plasma has also then been applied selectively a in the source and drain regions to seed large crystal grains in the channel. Transistors made with this method with maximum temperature of 600/spl deg/C showed a nearly twofold improvement in mobility (72 versus 37 cm/sup 2//Vs) over the unseeded devices at short channel lengths. The dominant factor in determining the field-effect mobility in all cases was the grain size of the polycrystalline silicon, and not the gate oxide growth/deposition conditions. Significant increases in mobility are observed when the grain size is in order of the channel length. However the gate oxide plays an important role in determining the subthreshold slope and the leakage current.