What question did this study set out to answer?

Fabricate high-performance n-channel polycrystalline silicon thin-film transistors at low processing temperatures compatible with unheated glass substrates.

May 1, 1986IEEE Electron Device Letters

XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

View Full Paper

Ask AI

Bookmark

Fabricate high-performance n-channel polycrystalline silicon thin-film transistors at low processing temperatures compatible with unheated glass substrates.
Annealed 500–1000 Å thick hydrogenated amorphous silicon (a-Si:H) films using a 308 nm XeCl excimer laser without heating the underlying glass substrate.
Fabricated molybdenum-gate n-channel thin-film transistors in the laser-crystallized silicon films at a maximum processing temperature of 260°C.
Achieved complete crystallization of a-Si:H films without inducing thermal damage to the glass substrate.
Obtained a channel mobility of 180 cm²/V·s for transistors fabricated with a laser annealing energy density of 200 mJ/cm².

Discussion

No takes yet. Share an insight, caveat, or question.

Implication

Experimental study demonstrates fabrication of poly-Si thin-film transistors on unheated glass, indicating a pathway toward high-speed silicon devices at low temperatures.

Cite This Study

Sameshima et al. (1986) studied this question.

synapsesocial.com/papers/6a8336959080d9133c4ce255 https://doi.org/10.1109/edl.1986.26372

View Full Paper

Ask AI

Bookmark

Implication

Experimental study demonstrates fabrication of poly-Si thin-film transistors on unheated glass, indicating a pathway toward high-speed silicon devices at low temperatures.

XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

Key Points

Discussion

Implication

Cite This Study

XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

Key Points

Discussion

Implication

Cite This Study

Also Consider

Also Consider