Low-Temperature Laser-Crystallized Silicon Nanosheet Field Effect Transistors Enabling Monolithic 3D Integration

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Low-temperature process improves subthreshold swing and mobility in silicon field effect transistors, indicating potential for 3D integration.

Low-temperature process boosts performance of silicon field effect transistors while simplifying fabrication.
Subthreshold swing improvements highlight enhanced electrical metrics in optimized silicon crystalline structures.
Analysis involved structural characterization via transmission electron microscopy alongside electrical performance evaluation.
This method presents a strong foundation for developing future high-performance logic devices in 3D semiconductor systems.

Im et al. (2025) studied this question.

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Low-temperature process improves subthreshold swing and mobility in silicon field effect transistors, indicating potential for 3D integration.