The lifetimes of the gallium 5²S1/2 state, the indium 6²S1/2 state, and the thallium 7²S1/2 state were measured using the zero-field level-crossing (Hanle-effect) technique. The life-times obtained were (6.8±{}0.3) ×{} 10^-9, (7.0±{}0.3) ×{} 10^-9, and (7.45±{}0.2) ×{} 10^-9 sec, respectively. Anomalous contributions to the level-crossing signals, from the wavelength dependence of the exciting light intensity and self-absorption by the fluorescing atomic beam, were investigated in detail.
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Norton et al. (1971) studied this question.
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