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A novel, nearly hazardless Be ion implantation technique has been realized by adopting BeO ceramic material as an ion source. This method made possible a continuous Be ion current of several tens of µA without noticeable contamination. High dose Be ion implantation experiments were carried out using this technique and it has been found that Be atom activation can be improved by hot implantation and subsequent lower temperature annealing.
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Sugata et al. (1983) studied this question.
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