Low-temperature annealing behavior of GaAs implanted with Be

Ion implantation of Be into GaAs, followed by annealing at temperatures above 475 °C, produces layers with strong p-type conductivity and high hole mobility. Maximum electrical activation of the Be is obtained by 550 °C. Be appears to be the only dopant in GaAs which can be electrically activated at such low temperatures following implantation. At temperatures in the range 500–630 °C, satisfactory electrical results can be obtained by annealing in argon or vacuum without encapsulation. Little change in the electrical properties occurs for subsequent encapsulated annealing at temperatures up to 800 °C for the fluences used.