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July 1, 1975Applied Physics Letters

Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °C

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Authors

JDJ.P. DonnellyNorthwell HealthWLW.T. LindleyMIT Lincoln LaboratoryCHC. E. HurwitzMIT Lincoln Laboratory

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Donnelly et al. (1975) studied this question.

synapsesocial.com/papers/6a6f7660ac440176ef28248fhttps://doi.org/10.1063/1.88260
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