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Low-temperature (6 °K) photoluminescence data on Be-implanted GaAs are presented. A luminescence band centered at 1.4902 eV is related to recombination involving the Be acceptor. Annealing to 900 °C with Si3N4 encapsulation is shown to optically activate the implanted Be and reorder the lattice. The ionization energy of Be is estimated to be 22±3 meV.
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Chatterjee et al. (1975) studied this question.
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