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Nonalloyed Ohmic contacts to n-GaAs have been formed by vapor deposition of TiPtAu on pulse-electron-beam-annealed Se-implanted surfaces. Peak carrier concentrations were about 1.2×1019/cm3, yielding a specific contact resistance rc≲6×10−7 Ω cm2.
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Mozzi et al. (1979) studied this question.
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