PRESSURE-INDUCED TRANSITION OF 2DEG IN δ-DOPED GaAs TO INSULATING STATE

This is the authors' abstract. We don't add key points for this paper.

The tunneling and the lateral conductance of 2DEG formed in the GaAs with the δ-doped layer were measured simultaneously at hydrostatic pressures at helium temperatures. The resistivity of the δ-doped layer sharply increases by > 3 orders of magnitude at about 2 GPa, and its temperature coefficient changes from ~ - 0.04 to ~ - 4 K -1 . The tunneling resistance shows only slight change of exponential behavior at about 1.5 GPa, while a drastic change of the Zero Bias Anomaly (ZBA) takes place just at the metal–insulator transition. Such a behavior is interpreted in terms of pressure dependence of the GaAs band structure and the DX-level position.