Resonant tunneling of electrons between two-dimensional systems of different densities in a quantizing magnetic field

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The results of experimental investigation of the vertical electron transport in a GaAs/Al 0.3 Ga 0.7 As/GaAs single-barrier tunneling heterostructure with a doped barrier are presented. Two-dimensional accumulation layers appear on different sides of the barrier as a result of the ionization of Si donors in the barrier layer. The nonmonotonic shift of the current peak is found in the I–V curve of the tunneling diode in a magnetic field perpendicular to the planes of two-dimensional layers. Such a behavior is shown to be successfully explained in the model of appearing the Coulomb pseudogap and the pinning of the spin-split Landau levels at the Fermi levels of the contacts. In this explanation, it is necessary to assume that the Landé factor is independent of the filling factors of the Landau levels and is g * = 7.5 for both layers.