High-Program/Erase-Speed SONOS With In Situ Silicon Nanocrystals

In this letter, for the first time, we have successfully fabricated silicon–oxide–nitride–oxide–silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride usingin situmethod. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times byin situmethod were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (≫5.5\ V), lower operation voltage, high P/E speed, and longer retention time (≫10⁸\ sfor 13% charge loss).