n-channel insulated-gate field-effect transistors in Hg1−xCdxTe with x=0.215

The characteristics of n-channel insulated-gate field-effect transistors in Hg1−xCdxTe with x=0.215, channel length of 4 μm, and 0.2-μm ZnS as an insulator are presented and analyzed. The transistors exhibit at 77 K a threshold voltage of −0.1 V and an effective inversion layer electron mobility of (1–2) ×104 cm2 V−1 sec−1. A strong dependence of the surface mobility upon surface electric field is measured. The transistors may be used as switching and amplifying elements for monolithic structures in HgCdTe.